1.27 +0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2 -0.2 0.4 +0.2 -0.2 2.54 +0.2 -0.2 0.81 +0.1 -0.1 to - 263 unit: mm 1gate 2drain 3 source 1gate 2drain 3 source features 52a, 30 v. r ds(on) =0.0135 @v gs =10v r ds(on) =0.020 @v gs =4.5v low gate charge (typical 34 nc). low crss (typical 175 pf). fast switching speed. absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 30 v gate to source voltage v gs 20 v drain current continuous 52 a drain current pulsed 156 a power dissipation @ t c =25 p d 75 w derate above 25 p d 0.5 w/ operating and storage temperature t j ,t stg -65to175 thermal resistance junction to case r jc 2 /w thermal resistance junction to ambient r ja 62.5 /w i d 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors kdb6030l smd type ic smd type transistors smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit single pulse drain-source avalanche energy * w dss v dd =15v,i d = 21a 150 mj maximum drain-source avalanche current i ar 21 a drain-source breakdown voltage b vdss v gs =0v,i d = 250 a 30 v breakdown voltage temperature coefficient i d = 250 a, referenced to 25 37 mv/ zero gate voltage drain current i dss v ds =24v,v gs =0v 10 a gate-body leakage, forward i gssf v gs =20v,v ds = 0 v 100 na gate-body leakage, reverse i gssr v gs =-20v,v ds =0v -100 na gate threshold voltage v gs(th) v ds =v gs ,i d = 250 a 11.6 3 v gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 -4 mv/ v gs =10v,i d = 26 a 0.0095 0.0135 v gs =10v,i d = 26 a,tj = 125 0.014 0.023 v gs =4.5v,i d =21 a, 0.015 0.02 on-state drain current i d(on) v gs =10v,v ds =10v 60 a on-state drain current i d(on) v gs =4.5v,v ds =10v 15 forward transconductance g fs v ds =10v,i d =26a 37 s input capacitance c iss 1230 pf output capacitance c oss 640 pf reverse transfer capacitance c rss 175 pf turn-on delay time t d(on) 7.6 15 ns turn-on rise time tr 150 210 ns turn-off delay time t d(off) 29 46 ns turn-off fall time t f 17 27 ns total gate charge q g 34 46 nc gate-source charge q gs 6nc gate-drain charge q gd 8nc maximum continuous drain?source diode forward current * i s 52 a drain-source diode forward voltage v sd v gs =0v,i s = 26 a * 0.91 1.3 v drain-source diode forward voltage v sd v gs =0v,i s =26a*t j =125 0.8 1.2 v * pulse test: pulse width 300 s, duty cycle 2.0% v ds =12v,i d = 26a,v gs =10v* m r ds(on) static drain-source on-resistance v dd =15v,i d =52a,v gs =10v, r gen =24 * v ds =15v,v gs =0v,f=1.0mhz kdb6030l 4008-318-123 sales@twtysemi.com 2of 2 http://www.twtysemi.com smd type ic smd type transistors smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification
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